ds30403 rev. 2 - 2 1 of 3 ddtb (lo-r1) c www.diodes.com diodes incorporated ddtb (lo-r1) c pnp pre-biased 500 ma sot-23 surface mount transistor epitaxial planar die construction complementary npn types available (ddtd) built-in biasing resistors lead free product features maximum ratings @ t a = 25 c unless otherwise specified a e j l m b 3 out top view in gnd 2 1 c h g d k mechanical data case: sot-23, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin (note 1) solderable per mil-std-202, method 208 terminal connections: see diagram marking: date code and marking code (see diagrams & page 2) weight: 0.008 grams (approx.) ordering information (see page 2) (2) in r 1 r 2 gnd (1) out (3) p/n r1 (nom) r2 (nom) marking DDTB122LC ddtb142jc ddtb122tc ddtb142tc 0.22k 0.47k 0.22k 0.47k 10k 10k open open p75 p76 p77 p78 characteristic symbol value unit supply voltage, (3) to (1) v cc -50 v input voltage, (2) to (1) DDTB122LC ddtb142jc v in +5 to -6 +5 to -6 v input voltage, (1) to (2) ddtb122tc ddtb142tc v ebo (max) -5 v output current all i c -500 ma power dissipation (note 2) p d 200 mw thermal resistance, junction to ambient air (note 2) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm t c u d o r p w e n
ds30403 rev. 2 - 2 2 of 3 ddtb (lo-r1) c www.diodes.com characteristic symbol min typ max unit test condition input voltage DDTB122LC ddtb142jc v l(off) -0.3 -0.3 v v cc = -5v, i o = -100 a DDTB122LC ddtb142jc v l(on) -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) -0.3v v i o /i l = -50ma/-2.5ma input current DDTB122LC ddtb142jc i l -28 -13 ma v i = -5v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain DDTB122LC ddtb142jc g l 56 56 v o = -5v, i o = -50ma gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -40 v i c = -1ma emitter-base breakdown voltage ddtb122tc ddtb142tc bv ebo -5 v i e = -50 a i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current ddtb122tc ddtb142tc i ebo -0.5 -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c = -50ma, i b = -2.5ma dc current transfer ratio ddtb122tc ddtb142tc h fe 100 100 250 250 600 600 i c = -5ma, v ce = -5v gain-bandwidth product* f t 200 mhz v ce = -10v, i e = 5ma, f = 100mhz electrical characteristics r1-only types @ t a = 25 c unless otherwise specified * transistor - for reference only xxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september xxx ym marking information notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping DDTB122LC-7 sot-23 3000/tape & reel ddtb142jc-7 sot-23 3000/tape & reel ddtb122tc-7 sot-23 3000/tape & reel ddtb142tc-7 sot-23 3000/tape & reel ordering information (note 3) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key t c u d o r p w e n
ds30403 rev. 2 - 2 3 of 3 ddtb (lo-r1) c www.diodes.com -50 050100150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 power deratin g curve p , power dissipation (mw) d t c u d o r p w e n
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